Ultra-high sensitivity for the analysis of trace impurities
SCAS offers ultrahigh-sensitive analysis, by performing pre-treatment in a CR, for surface molecular contaminants (SMCs) on wafers, and contamination such as organic materials, inorganic ions, metallic elements, and particles, which occur in the manufacturing processes for various devices, and inside/outside equipment.
Test Items
object of analysis | purpose, test item | techniques/apparatus |
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Wafer surface, surface layer | Qualification/Quantification of ultra-trace metal components | ICP/MS、ICP/AES、GF-AAS、SIMS |
Qualification/Quantification of ultra-trace ion components | IC、ICP-MS、IC/TOF-MS、CE、 | |
CE-MS、CE/TOF-MS | ||
Qualification/Quantification of ultra-trace organic components | WTD-GC/MS、GC-MS | |
Local parts of wafer (spots, edges, bevel parts) | ICP/MS、 ICP/AES、GF-AAS | |
Qualification/Quantification of ultra-trace ion components | IC、IC/MS、IC/TOF-MS、CE、 | |
CE-MS、CE/TOF-MS | ||
Qualitative analysis | TOF-SIMS、AES、XPS、 | |
FT-IR、EPMA、SEM-EDX、 | ||
TDS、Raman spectroscopy |
Technical News
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TN187Ultra-trace Analysis of Metal Impurities in Non-silicon Thin Films on Silicon Wafers
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TN176Chemical Analysis of Ionic Contaminants on Silicon Wafer Surface
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TN426Identification of Foreign Matter by Pyrolysis-GC/MS
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TN410Chemical Analysis of Trace Metal Contamination on φ450 mm Silicon Wafer Surface
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TN347Determination of Trace Impurities on Silicon Surface in Solar Cell
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TN335Analysis of Metallic Impurities in Limited Area of Silicon Wafer
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TN192Phosphorus Analysis of Oxide Film on Silicon Wafer Surface by High Resolution Inductively Coupled Plasma Mass Spectrometry(HR-ICP-MS)
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TN177Sticking Behavior of Acidic and Basic Compounds onto Silicon Wafer Surface
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TN049Determination of impurities in fine ceramics
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TN042Chemical Analysis of Metallic Impurities on Silicon Wafer Surface
Contact Us for Services
For inquiries and requests concerning services of analysis, measurements, products and consulting, please contact us via inquiry form.