High-sensitivity quantification of trace metal impurities
We perform high-sensitivity quantification of metal thin films used in applications such as electrode materials, insulation films, and magnetic films, and trace metal impurities in silicon substrates and quartz substrates.
Test Items
Technical News
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TN042NEWChemical Analysis of Metal Impurities on Silicon Wafer Surface Using Inductively Coupled Plasma Mass Spectrometry (ICP-MS)
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TN087Analysis of Trace Amounts of Anions and Cations in Ultrapure Water
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TN187Ultra-trace Analysis of Metal Impurities in Non-silicon Thin Films on Silicon Wafers
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TN176Chemical Analysis of Ionic Contaminants on Silicon Wafer Surface
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TN485Visualization of Components and Structure in the Micro Region: Imaging Analysis by Raman Microspectroscopy
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TN484Precision Measurement of Coefficient of Thermal Expansion (CTE) by High Sensitivity TMA
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TN438Evaluation of acidic and basic contaminants using solid active sampler BremS®
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TN177Sticking Behavior of Acidic and Basic Compounds onto Silicon Wafer Surface
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TN165Surface analysis of wafers after post Cu-CMP cleaning by Time of Flight Secondary Ion Mass Spectrometry（TOF-SIMS）
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TN148Surface analysis of wafer after post Cu-CMP cleaning by X-ray Photoelectron
Spectroscopy（XPS) -
TN028Characterization of Fine Substance on Silicon Wafer with Fourier Transform Infrared Microspectrometry（m-FT-IR）
Contact Us for Services
For inquiries and requests concerning services of analysis, measurements, products and consulting, please contact us via inquiry form.