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TOF-SIMS:Time-of-Flight Secondary Ion Mass Spectrometry   Principle of measurement When a small quantity of primary ions (pulses) is irradiated to a sample surface, secondary ions, such as fragment ions and molecular ions, are discharged from the sample surface. Information on the constituent elements on the sample surface and the chemical structure of the elements can be obtained by measuring the secondary ions with a time-of-flight mass spectrometer. The two-dimensional distribution of each component can be observed by mapping.

Major analytical applications for semiconductor materials Verification of effect of cleaning process to remove contamination and residue from wafer surfaces Investigation of causes of pad bonding strength failure Investigation of causes of discoloration of lead frame Investigation of causes of LCD defects (stain, chrominance non-uniformity and cissing) Analysis of clouding and foreign particles on stepper lens Example of spectrum measurement Example of mapping

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