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SEM: Scanning Electron Microscopy TEM: Transmission Electron Microscopy   Principle of measurement For failure analysis of semiconductors and LCD devices, the importance of evaluation (observation and analysis) of specific micro areas is increasingly high at the research and development stage and on the manufacturing line. FIB (Focused Ion Beam) is equipment that scans the sample surface with Ga ions accelerated to several tens of keV to enable processing of the um order. FIB processing and SEM•ETEM observing method is an evaluation technique that enables structural analysis in micro areas. * SIM (Scanning Ion Microscope): Scanning secondary ion image

Major analytical applications for semiconductor materials  Features of FIB processing 1. It is possible to fabricate samples for selective SEM/TEM observation of specific micro areas. 2. Time to fabricate samples can be reduced remarkably. 3. Difference in etching rate between materials is insignificant, and uniform samples can be fabricated.   Details of evaluation Failure analysis of semiconductor devices and investigation of causes of generation of foreign particles Failure analysis of LCD devices and investigation of causes of generation of foreign particles Evaluation of interfaces of functional thin films Observation of conditions between metallic thin films TEM observation of cross section of contact area Changes in shape of grains depending on film depositing method

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