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AES: Auger Electron Spectroscopy   Principle of measurement When electron rays are emitted to a sample surface, secondary electrons and characteristic X-rays are discharged from the sample surface. Auger electrons generated in the Auger process exist in the discharged secondary electrons. Since the kinetic energy of the Auger electrons is specific to the substance without depending on the emitted electrons and energy of light, the element is identified and its chemical conditions are analyzed by detecting the kinetic energy. Kinetic energy of Auger electron: EA = EL1 - Ek - EL2 - Φ

Major analytical applications for semiconductor materials   1. Analysis of composition in micro area on outermost surface Analysis of micro foreign matter on wiring on wafer surface Analysis of peeling residues   2. In-depth analysis of micro areas and thin films Evaluation of composition of multi-layer thin films Evaluation of diffusion on various metallic films

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